Prof. Dr. Russell D. Dupuis

Profile

Academic positionFull Professor
Research fieldsSemiconductor Physics,Electronic Semiconductors, Components and Circuits, Integrated Systems, Sensor Technology, Theoretical Electrical Engineering
Keywordsmetalorganic chemical vapor deposition, compound semiconductors, laser diodes, LEDs, transistors

Current contact address

CountryUnited States of America
CityAtlanta
InstitutionGeorgia Institute of Technology
InstituteElectrical and Computer Engineering

Host during sponsorship

Prof. Dr. Günther TränkleFerdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Berlin
Prof. Dr. Michael KneisslInstitut für Festkörperphysik, Technische Universität Berlin, Berlin
Start of initial sponsorship01/02/2014

Programme(s)

2013Humboldt Research Award Programme

Nominator's project description

Professor Dupuis is an international authority in the area of optoelectronic and electronic devices as well as III-V semiconductor materials. He developed the first high-performance metalorganic chemical vapor deposition (MOCVD) epitaxial growth systems for III-V compound semiconductors and demonstrated the first III-V solar cells and laser diodes, including the first room-temperature quantum-well lasers, grown by MOCVD, a process which is currently in worldwide use for the large-scale production of visible LEDs, high-speed optical communication system components and solar cells. In Germany, Professor Dupuis will focus on the wide-bandgap III-N compound semiconductor system and the creation of novel nanostructure devices in these materials.